Product Details for Material from Alpha & Omega Semiconductor Inc. - AOT11S65L - MOSFET N-CH 650V 11A TO220 N-Channel 650V 11A (Tc) 198W (Tc) Through Hole TO-220

AOT11S65L Alpha & Omega Semiconductor Inc. MOSFET N-CH 650V 11A TO220 N-Channel 650V 11A (Tc) 198W (Tc) Through Hole TO-220

Part Nnumber
AOT11S65L
Description
MOSFET N-CH 650V 11A TO220 N-Channel 650V 11A (Tc) 198W (Tc) Through Hole TO-220
Producer
Alpha & Omega Semiconductor Inc.
Basic price
1,08 EUR

The product with part number AOT11S65L (MOSFET N-CH 650V 11A TO220 N-Channel 650V 11A (Tc) 198W (Tc) Through Hole TO-220) is from company Alpha & Omega Semiconductor Inc. and distributed with basic unit price 1,08 EUR. Minimal order quantity is 1 pc, Approx. production time is 84 weeks.


Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Alpha & Omega Semiconductor Inc. Series aMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 646pF @ 100V FET Feature - Power Dissipation (Max) 198W (Tc) Rds On (Max) @ Id, Vgs 399 mOhm @ 5.5A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3


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